Publication
Substrate noise isolation improvement in a single-well standard CMOS process
| dc.contributor.author | Santos, P. Mendonça dos | |
| dc.contributor.author | Moreira Mendes, Luís Miguel | |
| dc.contributor.author | João Caldinhas Vaz | |
| dc.date.accessioned | 2025-06-23T14:41:26Z | |
| dc.date.available | 2025-06-23T14:41:26Z | |
| dc.date.issued | 2016-01 | |
| dc.description.abstract | This work describes a fully CMOS compatible methodology, which makes available a pseudo deep n-well in single-well standard CMOS process. The proposed method is based on mask manipulation to accommodate the field implant p-type region into the n-well, and does not require any additional masks or modification in the CMOS process flow. According to the experimental results, the floating NMOS made available by the methodology shows a reduction in the threshold voltage, which implies a slight improvement in its performance, when compared with its standard NMOS counterpart. It was also experimentally demonstrated up to 3 GHz, that the guard-ring field implant/pseudo deep n-well proposed structure improves substrate noise isolation when compared to the classical p+ guard-ring, with a maximum improvement above 20 dB for low frequencies and a minimum of 4 dB at 3 GHz. | por |
| dc.description.sponsorship | This work was funded by FCT projects UID/EEA/50008/2013 and PEst-OE/EEI/LA0008/2014. | |
| dc.identifier.citation | P. Mendonça dos Santos, Luís Mendes, João Caldinhas Vaz, Substrate noise isolation improvement in a single-well standard CMOS process, Integration, Volume 52, 2016, Pages 122-128, ISSN 0167-9260, https://doi.org/10.1016/j.vlsi.2015.09.006 | |
| dc.identifier.doi | 10.1016/j.vlsi.2015.09.006 | |
| dc.identifier.issn | 0167-9260 | |
| dc.identifier.uri | http://hdl.handle.net/10400.8/13380 | |
| dc.language.iso | eng | |
| dc.peerreviewed | yes | |
| dc.publisher | Elsevier BV | |
| dc.relation | Strategic Project - LA 8 - 2013-2014 | |
| dc.relation | UID/EEA/50008/2013 | |
| dc.relation.hasversion | https://www.sciencedirect.com/science/article/pii/S0167926015001212?via%3Dihub | |
| dc.relation.ispartof | Integration | |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
| dc.subject | CMOS technology | |
| dc.subject | MOSFET | |
| dc.subject | Integrated circuit noise | |
| dc.title | Substrate noise isolation improvement in a single-well standard CMOS process | eng |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.awardTitle | Strategic Project - LA 8 - 2013-2014 | |
| oaire.awardURI | http://hdl.handle.net/10400.8/12984 | |
| oaire.awardURI | info:eu-repo/grantAgreement/FCT/5876/UID%2FEEA%2F50008%2F2013/PT | |
| oaire.citation.endPage | 128 | |
| oaire.citation.startPage | 122 | |
| oaire.citation.title | Integration: the VLSI Journal | |
| oaire.citation.volume | 52 | |
| oaire.fundingStream | 6817 - DCRRNI ID | |
| oaire.fundingStream | 5876 | |
| oaire.version | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |
| person.familyName | Moreira Mendes | |
| person.givenName | Luís Miguel | |
| person.identifier.ciencia-id | 0A11-CBD0-48A2 | |
| project.funder.identifier | http://doi.org/10.13039/501100001871 | |
| project.funder.name | Fundação para a Ciência e a Tecnologia | |
| relation.isAuthorOfPublication | 6651dc04-a958-4198-a5fa-a5b665e08656 | |
| relation.isAuthorOfPublication.latestForDiscovery | 6651dc04-a958-4198-a5fa-a5b665e08656 | |
| relation.isProjectOfPublication | 5ff93f54-75ba-48da-8a10-c54ab3a373f5 | |
| relation.isProjectOfPublication | f047085f-2057-404f-992e-a4f6ee3db7b3 | |
| relation.isProjectOfPublication.latestForDiscovery | 5ff93f54-75ba-48da-8a10-c54ab3a373f5 |