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Advisor(s)
Abstract(s)
Thin films of La and Si with Si/(La+Si) atomic ratios ranging from 0.36 to 0.44 were produced by magnetron sputtering in pure Ar. For all compositions, the apatite-like La 9.33Si 6O 26 phase was formed during annealing in air at 900°C. A preferential orientation was developed during annealing of the films with higher silicon content while formation of oxide impurities was detected for the films with less silicon. Silicon segregation to the thin film/substrate interface was observed after annealing for thin films with higher Si/(La+Si) atomic ratios. The higher ionic conductivity values were obtained with the films with lower silicon content (2.81×10 -3Scm -1 at 800°C for the film with Si/(La+Si) atomic ratio of 0.36). This film presented the lower activation energy E a (0.94eV)
Description
Keywords
Lanthanum silicate Thin films Electrolyte Ionic conductivity Solid Oxide Fuel Cell
Pedagogical Context
Citation
M.M. Vieira, J.C. Oliveira, A.L. Shaula, A. Cavaleiro, B. Trindade, Lanthanum silicate thin films for SOFC electrolytes synthesized by magnetron sputtering and subsequent annealing, Surface and Coatings Technology, Volume 206, Issue 14, 2012, Pages 3316-3322, ISSN 0257-8972, https://doi.org/10.1016/j.surfcoat.2012.01.042
Publisher
Elsevier
