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The impact of long-term memory effects on diode power probes

2010-05Conference paper Open access
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datacite.subject.fosCiências Naturais::Ciências Físicas
datacite.subject.fosEngenharia e Tecnologia::Engenharia Eletrotécnica, Eletrónica e Informática
datacite.subject.sdg03:Saúde de Qualidade
datacite.subject.sdg10:Reduzir as Desigualdades
datacite.subject.sdg11:Cidades e Comunidades Sustentáveis
datacite.subject.sdg07:Energias Renováveis e Acessíveis
dc.contributor.authorGomes, Hugo
dc.contributor.authorTestera, Alejandro R.
dc.contributor.authorCarvalho, Nuno Borges
dc.contributor.authorBarciela, Mónica F.
dc.contributor.authorRemley, Kate A.
dc.date.accessioned2025-11-06T17:12:23Z
dc.date.available2025-11-06T17:12:23Z
dc.date.issued2010-05
dc.descriptionArticle number - 5514791; Conference name - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Conference date - 23 May 2010 - 28 May 2010; Conference code - 81798
dc.descriptionFonte: https://portalcientifico.uvigo.gal/documentos/5fa083ea299952440aaec634
dc.descriptionEISBN - 978-1-4244-6058-8
dc.description.abstractThis paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.eng
dc.description.sponsorshipThis work was partially supported by projects TEC2008-06874-C03-02, INCITE08PXIB322241PR, Acción Integrada (HP2006-120) and TACCS - PTDC/EEA-TELl099646/2008.
dc.identifier.citationGomes, H., Testera, A. R., Carvalho, N. B., Barciela, M. F., & Remley, K. A. (2010). The impact of long-term memory effects on diode power probes. IEEE MTT-S International Microwave Symposium Digest, 596-599. https://doi.org/10.1109/MWSYM.2010.5514791.
dc.identifier.doi10.1109/mwsym.2010.5514791
dc.identifier.isbn978-1-4244-6056-4
dc.identifier.isbn978-1-4244-6058-8
dc.identifier.issn0149-645X
dc.identifier.urihttp://hdl.handle.net/10400.8/14549
dc.language.isoeng
dc.peerreviewedyes
dc.publisherIEEE Canada
dc.relation.hasversionhttps://ieeexplore.ieee.org/document/5514791
dc.relation.ispartof2010 IEEE MTT-S International Microwave Symposium
dc.rights.uriN/A
dc.subjectDiode Power Probe
dc.subjectLong-term Memory Effects
dc.subjectNonlinear Devices
dc.subjectPower Measurement
dc.titleThe impact of long-term memory effects on diode power probeseng
dc.typeconference paper
dspace.entity.typePublication
oaire.citation.conferenceDate2010-05
oaire.citation.conferencePlaceAnaheim, California, USA
oaire.citation.titleIEEE MTT-S International Microwave Symposium Digest
oaire.versionhttp://purl.org/coar/version/c_ab4af688f83e57aa
person.familyNameCravo Gomes
person.givenNameHugo Miguel
person.identifier.orcid0000-0002-0951-8215
relation.isAuthorOfPublication03cf1f34-9674-4280-a221-d87f6e59f75c
relation.isAuthorOfPublication.latestForDiscovery03cf1f34-9674-4280-a221-d87f6e59f75c

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This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
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