Browsing by Author "Santos, M. C."
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- High-k oxidesPublication . Silva, E. L.; Santos, M. C.Due to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of the oxide contender may exponentially decrease the tunnelling currents, while achieving the same level of capacitance as the actual devices of SiO2.
- Physics in a Nano-ScalePublication . Silva, E. L.; Santos, M. C.Since much attention is being drawn to nano-optoelectronic devices, with promising technological and medical applications (molecular photosensitization, colour-dyes, new generation of solar cell applications, Li-ion batteries), the understanding of the electrical and optical properties of hydrogen-passivated silicon nanocrystals (Si-NC) becomes an important aspect to focus upon, due to the fact that these systems possess different properties from those of the bulk materials. Nanostructures, smaller than macroscopic objects (present-day electronic devices), but larger than molecules, which description belongs to a complex domain of quantum mechanics, where amazing properties emerge. Quantum effects become dominant when the nanometre size range is reached, thus accounting for changes in the physical properties of nanostructures, as is the case for the increase in surface area to volume ratio altering mechanical and thermal properties of materials. Here, the geometry of the material can dictate drastic effects on quantized states.