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Publicação
A 130 nm CMOS LNA for 30 GHz applications
Orientador(es)
Resumo(s)
This paper presents the design of a 30 GHz low noise amplifier in a 130 nm CMOS technology. The amplifier is based on a cascode topology. The circuit uses autotransformers in the input and output matching networks. This design approach eliminates the necessity of the use of source degeneration and allows obtaining an ultra compact LNA. The amplifier presents a forward gain (S21) of 7.4 dB at 30 GHz with a bandwidth of 10 GHz, input and output VSWRs better than 1.22:1 and a noise figure of 3.7 dB. The LNA is unconditionally stable and consumes only 7 mW when supplied with 1.2 V. The amplifier fits an area of 0.08 mm2, which is one of the smallest areas reported.
Descrição
Palavras-chave
low noise amplifier milimeter wave cascode
Contexto Educativo
Citação
R. Ribeiro, L. Mendes, J. C. Vaz, M. J. Rosário and J. C. Freire, "A 130 nm CMOS LNA for 30 GHz applications," 2011 IEEE EUROCON - International Conference on Computer as a Tool, Lisbon, Portugal, 2011, pp. 1-4, doi: 10.1109/EUROCON.2011.5929383.
Editora
IEEE