Gomes, HugoTestera, Alejandro R.Carvalho, Nuno BorgesBarciela, Mónica F.Remley, Kate A.2025-11-062025-11-062010-05Gomes, H., Testera, A. R., Carvalho, N. B., Barciela, M. F., & Remley, K. A. (2010). The impact of long-term memory effects on diode power probes. IEEE MTT-S International Microwave Symposium Digest, 596-599. https://doi.org/10.1109/MWSYM.2010.5514791.978-1-4244-6056-4978-1-4244-6058-80149-645Xhttp://hdl.handle.net/10400.8/14549Article number - 5514791; Conference name - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010; Conference date - 23 May 2010 - 28 May 2010; Conference code - 81798Fonte: https://portalcientifico.uvigo.gal/documentos/5fa083ea299952440aaec634EISBN - 978-1-4244-6058-8This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.engDiode Power ProbeLong-term Memory EffectsNonlinear DevicesPower Measurementconference paper10.1109/mwsym.2010.5514791